Interface-dependent rectifying TbMnO3-based heterojunctions

High rectifying behavior in Al/Sinanocrystal-embedded SiOxNy/p-Si heterojunctions

We examine the electrical properties of MIS devices made of Al/Si nanocrystal–SiOxNy/p-Si. The J–V characteristics of the devices present a high rectifying behavior. Temperature measurements show that the forward current is thermally activated following the thermal diffusion model of carriers. At low reverse bias, the current is governed by thermal emission amplified by the Poole–Frenkel effect...

Study of interface asymmetry in InAs–GaSb heterojunctions

We present reflection high energy electron diffraction, secondary ion mass spectroscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of the abruptness of InAs–GaSb interfaces. We find that the interface abruptness depends on growth order: InAs grown on GaSb is extended, while GaSb grown on InAs is more abrupt. We first present observations of the interfacial asymm...

Multiferroic TbMnO3 nanoparticles

We report on the synthesis of TbMnO3 nanoparticles by chemical co-precipitation route and their structural, chemical bonding, magnetic and dielectric properties. It is shown that the interesting multiferroic properties of this system as reflected by the concurrent occurrence of magnetic and dielectric transitions are retained in the nanoparticles (size ~40 nm). However, the nanoparticle constit...

Electrical conduction by interface states in semiconductor heterojunctions

Electrical conduction in semiconductor heterojunctions containing defect states in the interface region is studied. As the classical drift-diffusion mechanism cannot in any case explain electrical conduction in semiconductor heterojunctions, tunnelling involving interface states is often considered as a possible conduction path. A theoretical treatment is made where defect states in the interfa...

Influence of strain on the electronic structure of the TbMnO3/SrTiO3 epitaxial interface